Datasheet4U Logo Datasheet4U.com

RJK03M5DNS - Silicon N-Channel MOSFET

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment.

Features

  • High speed switching.
  • Capable of 4.5 V gate drive.
  • Low drive current.
  • High density mounting.
  • Low on-resistance RDS(on) = 5.2 m typ. (at VGS = 10 V).
  • Pb-free.
  • Halogen-free Outline.

📥 Download Datasheet

Datasheet preview – RJK03M5DNS

Datasheet Details

Part number RJK03M5DNS
Manufacturer Renesas Technology
File Size 130.81 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet RJK03M5DNS Datasheet
Additional preview pages of the RJK03M5DNS datasheet.

📁 Similar Datasheet

Other Datasheets by Renesas Technology

Full PDF Text Transcription

Click to expand full text
RJK03M5DNS Silicon N Channel Power MOS FET Power Switching Features  High speed switching  Capable of 4.5 V gate drive  Low drive current  High density mounting  Low on-resistance RDS(on) = 5.2 m typ. (at VGS = 10 V)  Pb-free  Halogen-free Outline RENESAS Package code: PWSN0008JB-A (Package name: HWSON-8) 5 6 78 Preliminary Datasheet R07DS0769EJ0110 Rev.1.10 May 29, 2012 5 678 D DDD 4 321 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2.
Published: |