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RJK03M7DPA - Silicon N-Channel MOSFET

Description

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Features

  • High speed switching.
  • Capable of 4.5 V gate drive.
  • Low drive current.
  • High density mounting.
  • Low on-resistance RDS(on) = 8.0 m typ. (at VGS = 10 V).
  • Pb-free.
  • Halogen-free Outline Preliminary Datasheet R07DS0773EJ0110 Rev.1.10 Feb 22, 2012.

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RJK03M7DPA Silicon N Channel Power MOS FET Power Switching Features  High speed switching  Capable of 4.5 V gate drive  Low drive current  High density mounting  Low on-resistance RDS(on) = 8.0 m typ. (at VGS = 10 V)  Pb-free  Halogen-free Outline Preliminary Datasheet R07DS0773EJ0110 Rev.1.10 Feb 22, 2012 RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F)) 5678 5 678 D DDD 4321 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2.
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