RJK1560DPP-M0 Overview
Preliminary Datasheet RJK1560DPP-M0 Silicon N Channel MOS FET High Speed Power Switching.
RJK1560DPP-M0 Key Features
- Capable of 2.5 V gate drive
- Low on-resistance RDS(on) = 0.043 typ. (at ID = 10 A, VGS = 4 V, Ta = 25C)
- Low leakage current
- High speed switching R07DS0270EJ0100 Rev.1.00 Mar 07, 2011