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RJK4515DPK
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 0.171 Ω typ. (at ID = 13.5 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching REJ03G1869-0100 Rev.1.00 Dec 08, 2009
Outline
RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P)
D
G
1. Gate 2. Drain (Flange) 3. Source
S
1
2
3
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Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3.
RJK4515DPK Datasheet
