RJP1CS04DWT Datasheet IGBT

Manufacturer: Renesas

Datasheet Details

Preliminary Datasheet RJP1CS04DWT/RJP1CS04DWA 1250V - 50A - IGBT Application:.

Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C).
High speed switching.
Short circuit withstands time (10 s min. ) R07DS0827EJ0004 Rev.0.04 Jun 05, 2012 Outline Die: RJP1CS04DWT-80 2 C 3 1G 1 Wafer: RJP1CS04DWA-80 2 1. Gate 2. Collector (The back) 3. Emitter www. DataSheet. net/ E 3 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Jun.