Description
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.
Features
- Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C).
- High speed switching.
- Short circuit withstands time (10 s min. ) R07DS0827EJ0004 Rev.0.04 Jun 05, 2012
Outline
Die: RJP1CS04DWT-80
2 C 3 1G 1
Wafer: RJP1CS04DWA-80
2
1. Gate 2. Collector (The back) 3. Emitter
www. DataSheet. net/
E 3
3
Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Jun.
RJP1CS04DWT_Renesas.pdf
