Description
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.
Features
- Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 100 A, VGE = 15 V, Ta = 25C).
- High speed switching.
- Short circuit withstands time (10 s min. ) R07DS0829EJ0002 Rev.0.02 Jul 05, 2012
Outline
Die: RJP1CS06DWT-80
2 C 3
Wafer: RJP1CS06DWA-80
2
1G
1
3
1. Gate 2. Collector (The back) 3. Emitter
E 3
3
www. DataSheet. net/
Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 10.
RJP1CS06DWT_Renesas.pdf
