RJP1CS06DWT Datasheet IGBT

Manufacturer: Renesas

Datasheet Details

Preliminary Datasheet RJP1CS06DWT/RJP1CS06DWA Silicon N Channel IGBT Application:.

Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 100 A, VGE = 15 V, Ta = 25C).
High speed switching.
Short circuit withstands time (10 s min. ) R07DS0829EJ0002 Rev.0.02 Jul 05, 2012 Outline Die: RJP1CS06DWT-80 2 C 3 Wafer: RJP1CS06DWA-80 2 1G 1 3 1. Gate 2. Collector (The back) 3. Emitter E 3 3 www. DataSheet. net/ Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 10.