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RJP1CS07DWA Datasheet IGBT

Manufacturer: Renesas

Download the RJP1CS07DWA datasheet PDF. This datasheet also includes the RJP1CS07DWT variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (RJP1CS07DWT_Renesas.pdf) that lists specifications for multiple related part numbers.

Overview

Preliminary Datasheet RJP1CS07DWT/RJP1CS07DWA 1250V - 150A - IGBT Application:.

Key Features

  • Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 150 A, VGE = 15 V, Ta = 25C).
  • High speed switching.
  • Short circuit withstands time (10 s min. ) R07DS0830EJ0003 Rev.0.03 Jul 05, 2012 Outline Die: RJP1CS07DWT-80 2 C Wafer: RJP1CS07DWA-80 3 2 3 1G 1 3 E 3 1. Gate 2. Collector (The back) 3. Emitter 3 www. DataSheet. net/ Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 10.