RJP30E2DPP-M0
RJP30E2DPP-M0 is N-Channel Power MOSFET manufactured by Renesas.
Preliminary Datasheet
Silicon N Channel IGBT High Speed Power Switching
Features
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- Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 μA max Isolated package TO-220FL R07DS0347EJ0200 Rev.2.00 Apr 12, 2011
Outline
RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL)
1. Gate 2. Collector 3. Emitter
2 3
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