RJP30H1DPD
RJP30H1DPD is N-Channel IGBT manufactured by Renesas.
Preliminary Datasheet
Silicon N Channel IGBT High speed power switching
Features
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- - Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 A max. R07DS0465EJ0200 Rev.2.00 Jun 15, 2011
Outline
RENESAS Package code: PRSS0004ZJ-A (Package name : TO-252)
1. Gate 2. Collector 3. Emitter 4. Collector...
