• Part: RJP30H2A
  • Description: Silicon N-Channel IGBT
  • Manufacturer: Renesas
  • Size: 226.18 KB
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RJP30H2A Key Features

  • Trench gate and thin wafer technology (G6H-II series)
  • Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ
  • High speed switching: tf = 100 ns typ, tf = 180 ns typ
  • Low leak current: ICES = 1 A max

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