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RJP30H2A Datasheet Silicon N-Channel IGBT

Manufacturer: Renesas

Overview: Preliminary Datasheet RJP30H2DPK-M0 / RJP30H2A Silicon N Channel IGBT High speed power switching R07DS0467EJ0200 Rev.2.

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RJP30H2A silicon n-channel igbt by Renesas - Datasheet Preview

Datasheet Details

Part number	RJP30H2A
Manufacturer	Renesas
File Size	226.18 KB
Description	Silicon N-Channel IGBT
Download	RJP30H2A Download (PDF)

Key Features

Trench gate and thin wafer technology (G6H-II series).
Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ.
High speed switching: tf = 100 ns typ, tf = 180 ns typ.
Low leak current: ICES = 1 A max Outline.

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