RJP65S07DWA Datasheet IGBT

Manufacturer: Renesas

Download the RJP65S07DWA datasheet PDF. This datasheet also includes the RJP65S07DWT variant, as both parts are published together in a single manufacturer document.

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RJP65S07DWA igbt by Renesas - Datasheet Preview — Note: The manufacturer provides a single datasheet file (RJP65S07DWT_Renesas.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	RJP65S07DWA
Manufacturer	Renesas
File Size	128.35 KB
Description	IGBT
Datasheet	RJP65S07DWA Datasheet

Overview

Preliminary Datasheet RJP65S07DWT/RJP65S07DWA 650V - 150A - IGBT Application:.

Key Features

Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 150 A, VGE = 15 V, Ta = 25C).
High speed Switching.
Short circuit withstands time (10 s min. ) R07DS0824EJ0001 Rev.0.01 Jul 05, 2012 Outline Die: RJP65S07DWT-80 2 C Wafer: RJP65S07DWA-80 3 2 3 1G 1 3 1. Gate 2. Collector (The back) 3. Emitter E 3 3 www. DataSheet. net/ Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°.

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