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RJP65S08DWT Datasheet IGBT

Manufacturer: Renesas

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Overview

Preliminary Datasheet RJP65S08DWT/RJP65S08DWA 650V - 200A - IGBT Application:.

Key Features

  • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 200 A, VGE = 15 V, Ta = 25C).
  • High speed Switching.
  • Short circuit withstands time (10 s min. ) R07DS0825EJ0001 Rev.0.01 Jul 05, 2012 Outline Die: RJP65S08DWT-80 2 C Wafer: RJP65S08DWA-80 3 2 3 1G 1 3 1. Gate 2. Collector (The back) 3. Emitter E 3 3 www. DataSheet. net/ Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°.

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