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RJP65S08DWT Datasheet, Renesas

RJP65S08DWT igbt equivalent, igbt.

RJP65S08DWT Avg. rating / M : 1.0 rating-12

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RJP65S08DWT Datasheet

Features and benefits


* Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 200 A, VGE = 15 V, Ta = 25C)
* High speed Switching
* Short circuit withstands t.

Application

for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; .

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