* Trench gate and thin wafer technology (G7H series)
* Isolated package
* Low collector to emitter saturation voltage
VCE(sat) = 1.8 V typ. (at IC = 20 A, VGE.
PFC
* Quality grade: Standard
Key Performance
Type RJP65T43DPM
VCES 650 V
IC 20 A
VCE(sat), TC=25°C 1.8 V
Tj 1.
High Speed Switching IGBT
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