TP65H300G4JSGB
Overview
The TP65H300G4JSGB 650V, 240mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform. It combines a state-ofthe-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.
- Gen IV technology
- JEDEC-qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by - Wide gate safety margin - Transient over-voltage capability
- Very low QRR
- Reduced crossover loss
- RoHS compliant and Halogen-free packaging Benefits
- Achieves increased efficiency in both hard- and soft-switched circuits - Increased power density - Reduced system size and weight - Overall lower system cost
- Easy to drive with commonly-used gate drivers
- GSD pin layout improves high speed design
