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TP65H300G4JSGB - 650V GaN FET

Product Overview

Renesas

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TP65H300G4JSGB 650V GaN FET by Renesas - Datasheet Preview — Datasheet preview – TP65H300G4JSGB

Datasheet Details

Part number	TP65H300G4JSGB
Manufacturer	Renesas
File Size	909.81 KB
Description	650V GaN FET
Datasheet	TP65H300G4JSGB Datasheet
Additional preview pages of the TP65H300G4JSGB datasheet.

Product details

Description

The TP65H300G4JSGB 650V, 240mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform.

Features

Gen IV technology.
JEDEC-qualified GaN technology.
Dynamic RDS(on)eff production tested.
Robust design, defined by.
Wide gate safety margin.
Transient over-voltage capability.
Very low QRR.
Reduced crossover loss.
RoHS compliant and Halogen-free packaging Benefits.
Achieves increased efficiency in both hard- and soft-switched circuits.
Increased power density.
Reduced system size and weight.
Overall lower syste.

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Published: Feb 21, 2025 |