TP65H300G4JSGB Datasheet, FET, Renesas

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TP65H300G4JSGB Features and benefits

* Gen IV technology
* JEDEC-qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by — Wide gate safety margin — Transi.

TP65H300G4JSGB Application

* Consumer
* Power adapters
* Low power SMPS
* Lighting Key Specifications VDS (V) min VDSS(TR) (V) ma.

TP65H300G4JSGB Description

The TP65H300G4JSGB 650V, 240mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform. It combines a state-ofthe-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. T.

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