Datasheet4U Logo Datasheet4U.com

TP65H300G4JSGB Datasheet 650v Gan Fet

Manufacturer: Renesas

Overview: Specifications in this document are tentative and subject to change Datasheet TP65H300G4JSGB 650V SuperGaN® GaN FET in PQFN (source.

General Description

The TP65H300G4JSGB 650V, 240mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform.

It combines a state-ofthe-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.

The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.

Key Features

  • Gen IV technology.
  • JEDEC-qualified GaN technology.
  • Dynamic RDS(on)eff production tested.
  • Robust design, defined by.
  • Wide gate safety margin.
  • Transient over-voltage capability.
  • Very low QRR.
  • Reduced crossover loss.
  • RoHS compliant and Halogen-free packaging Benefits.
  • Achieves increased efficiency in both hard- and soft-switched circuits.
  • Increased power density.
  • Reduced system size and weight.
  • Overall lower syste.

TP65H300G4JSGB Distributor

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Transphorm TP65H300G4LSG GaN FET Transphorm

More Datasheets from Renesas

Part Number Description
TP65H300G4LSG 650V SuperGaN FET
TP65H300G4LSGB 650V SuperGaN GaN FET
TP65H030G4PQS 650V GaN FET
TP65H030G4PRS 650V GaN FET
TP65H030G4PWS 650V GaN FET
TP65H035G4QS 650V SuperGaN FET
TP65H035G4WS 650V FET
TP65H035G4YS 650V SuperGaN FET
TP65H050G4BS 650V SuperGaN FET
TP65H050G4QS 650V FET