uPA2560 - Dual N-CHANNEL MOSFET

Renesas

General Description

inverters and power management applications of portable equipments.

contribute minimize the equipments.

Key Features

4.5 V drive available.
Low on-state resistance RDS(on)1 = 50 mΩ MAX. (VGS = 10 V, ID = 2 A) RDS(on)2 = 83 mΩ MAX. (VGS = 4.5 V, ID = 2 A).
Built-in gate protection diode.
Small and surface mount package (8-pin VSOF (2429)).

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uPA2560 dual n-channel mosfet by Renesas - Datasheet Preview

Datasheet Details

Part number	uPA2560
Manufacturer	Renesas
File Size	196.10 KB
Description	Dual N-CHANNEL MOSFET
Datasheet	uPA2560 Datasheet

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DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2560 Dual N-CHANNEL MOSFET FOR SWITCHING DESCRIPTION The μ PA2560 is Dual N-channel MOSFETs designed for Back light inverters and power management applications of portable equipments. Dual N-channel MOSFETs are assembled in one package, to contribute minimize the equipments. FEATURES • 4.5 V drive available • Low on-state resistance RDS(on)1 = 50 mΩ MAX. (VGS = 10 V, ID = 2 A) RDS(on)2 = 83 mΩ MAX. (VGS = 4.