uPA2560 Datasheet - Renesas

Dual N-CHANNEL MOSFET

* 4.5 V drive available

* Low on-state resistance RDS(on)1 = 50 mΩ MAX. (VGS = 10 V, ID = 2 A) RDS(on)2 = 83 mΩ MAX. (VGS = 4.5 V, ID = 2 A)

* Built-in gate protection diode

* Small and surface mount package (8-pin VSOF (2429)) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) D

uPA2560

196.10 KB

Dual n-channel mosfet.

📁 Related Datasheet

UPA2502 N-CHANNEL MOS FIELD EFFECT TRANSISTOR (NEC)

UPA2503 N-CHANNEL MOS FIELD EFFECT TRANSISTOR (NEC)

UPA2510 P-CHANNEL MOS FIELD EFFECT TRANSISTOR (NEC)

UPA2520 MOS FIELD EFFECT TRANSISTOR (Renesas)

UPA2521 MOS FIELD EFFECT TRANSISTOR (Renesas)

uPA2550 DUAL P-CHANNEL MOSFET (Renesas)

uPA2590 N- AND P-CHANNEL MOSFET (Renesas)

UPA2592T1H N- AND P-CHANNEL MOSFET (Renesas)

UPA2001C NPN Silicon Epitaxial Darlington Transistor Array (NEC)

UPA2002C NPN Silicon Epitaxial Darlington Transistor Array (NEC)

TAGS

uPA2560 Dual N-CHANNEL MOSFET Renesas

Image Gallery