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uPD46365084B - 36M-BIT QDR II SRAM 4-WORD BURST OPERATION

Description

The μPD46365084B is a 4,194,304-word by 8-bit, the μPD46365094B is a 4,194,304-word by 9-bit, the μPD46365184B is a 2,097,152-word by 18-bit and the μPD46365364B is a 1,048,576-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS sixtransistor

Features

  • 1.8 ± 0.1 V power supply.
  • 165-pin.

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Datasheet Details

Part number uPD46365084B
Manufacturer Renesas Electronics
File Size 567.92 KB
Description 36M-BIT QDR II SRAM 4-WORD BURST OPERATION
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μPD46365084B μPD46365094B μPD46365184B μPD46365364B Datasheet 36M-BIT QDRTM II SRAM 4-WORD BURST OPERATION R10DS0090EJ0400 Rev.4.00 Nov 09 2012 Description The μPD46365084B is a 4,194,304-word by 8-bit, the μPD46365094B is a 4,194,304-word by 9-bit, the μPD46365184B is a 2,097,152-word by 18-bit and the μPD46365364B is a 1,048,576-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS sixtransistor memory cell. The μPD46365084B, μPD46365094B, μPD46365184B and μPD46365364B integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (K and K#) are latched on the positive edge of K and K#.
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