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Elpida Memory
HB52F649E1-75B - 512 MB Registered SDRAM DIMM 64-Mword 72-bit/ 133 MHz Memory Bus/ 1-Bank Module (18 pcs of 64 M 4 Components) PC133SDRAM
HB52F649E1-75B 512 MB Registered SDRAM DIMM 64-Mword × 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M × 4 Components) PC133SDRAM E0021H20 .
GE
CDP1832 - 512-Word x 8-Bit Static Read-Only Memory
Read-Only Memories (ROMs) _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ CDP1832, CDP1832C Product Preview TERMINAL ASSIGNMENT MA7 MA6 I 2 24 VOO 23.
Mitsubishi
M5M27C202JK-10 - 2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
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Mitsubishi
M5M5256DP-70LL-I - 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
'97.4.7 MITSUBISHI LSIs M5M5256DP,KP,FP,VP,RV -45LL-I,-55LL-I,-70LL-I, -45XL-I,-55XL-I,-70XL-I 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DES.
Cypress Semiconductor
CY7C1414JV18 - (CY7C14xxJV18) SRAM 2-Word Burst Architecture
CY7C1410JV18, CY7C1425JV18 CY7C1412JV18, CY7C1414JV18 36-Mbit QDR™-II SRAM 2-Word Burst Architecture Features ■ Configurations CY7C1410JV18 – 4M x 8.
Elpida Memory
EDJ4208EFBG - 512M words x 8 bits 4G bits DDR3L SDRAM
COVER PRELIMINARY DATA SHEET 4G bits DDR3L SDRAM EDJ4204EFBG (1024M words × 4 bits) EDJ4208EFBG (512M words × 8 bits) EDJ4216EFBG (256M words × 16 b.
Sony Corporation
CXK581000AP - 131072-word x 8-bit High Speed CMOS Static RAM
CXK581000ATM/AYM/AM/AP -55SL/70SL/10SL 131072-word × 8-bit High Speed CMOS Static RAM For the availability of this product, please contact the sales o.
Sanyo
LC3564RT-10LV - 64K (8192 words x 8 bits) SRAM
Ordering number: EN 4484B CMOS LSI LC3564RM,RT-10LV/12LV/15LV 64K (8192 words × 8 bits) SRAM Overview The LC3564RM,RT are 8192-word × 8bit, asynchr.
Sanyo
LC36256AL-10 - 256 K (32768 words x 8 bits) SRAM
Ordering number : EN4163A Asynchronous Silicon Gate CMOS LSI LC36256AL, AML-70/85/10/12 256 K (32768 words × 8 bits) SRAM Overview The LC36256AL, A.
Sanyo
LC36256AL-85 - 256 K (32768 words x 8 bits) SRAM
Ordering number : EN4163A Asynchronous Silicon Gate CMOS LSI LC36256AL, AML-70/85/10/12 256 K (32768 words × 8 bits) SRAM Overview The LC36256AL, A.
Sanyo
LC371100SP-20LV - 1 MEG (131072 words x 8 bits) Mask ROM
Ordering number : EN*5087C CMOS LSI LC371100SP, SM, ST-10/20LV 1 MEG (131072 words× 8 bits) Mask ROM Internal Clocked Silicon Gate Preliminary Overv.
Mitsubishi
M5M5256DP-45LL-1 - 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
'97.4.7 MITSUBISHI LSIs M5M5256DP,KP,FP,VP,RV -45LL-I,-55LL-I,-70LL-I, -45XL-I,-55XL-I,-70XL-I 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DES.
Toshiba
TC5501D - 256 Word x 4-Bit CMOS RAM
www.DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com DataSh.
RCA Solid State
CD4039A - (CD4036A / CD4039A) COS/MOS 4-Word by 8-Bit Random Access NDRO Memory
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Cypress Semiconductor
CY7C1524JV18 - 72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
CY7C1522JV18, CY7C1529JV18 CY7C1523JV18, CY7C1524JV18 72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture Features ■ ■ ■ ■ ■ Functional Description Th.
Sanyo Semicon Device
LE28C1001T - 1MEG (131072 words x 8 bits) Flash Memory
Ordering number : EN*5129A CMOS LSI LE28C1001M, T-90/12/15 1MEG (131072 words × 8 bits) Flash Memory Preliminary Overview The LE28C1001M, T series I.
Hitachi Semiconductor
HB56SW3272ESK-5 - 256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components)
HB56SW3272ESK-5/6 256MB Buffered EDO DRAM DIMM 32-Mword × 72-bit, 4k Refresh, 2 Bank Module (36 pcs of 16M × 4 components) ADE-203-872B (Z) Rev. 1.0 .
Hitachi Semiconductor
HB56SW3272ESK-6 - 256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components)
HB56SW3272ESK-5/6 256MB Buffered EDO DRAM DIMM 32-Mword × 72-bit, 4k Refresh, 2 Bank Module (36 pcs of 16M × 4 components) ADE-203-872B (Z) Rev. 1.0 .