H5N2003P Datasheet | Renesas

Features - Low on-resistance - Low leakage current .. - High speed switching Outline TO-3P 1. Gate 2. Drain (Flange) 3. Source Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAP Pch Note2 θch-c Tch Tstg Note3 Ratings 200 ±30 60 240 60 240 40 150 0.833 150 - 55 to +150 Unit V V A A A A A W °C/W °C °C Rev.1.00, Apr.09.2004, page 1 of 6 Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Zero Gate voltage drain current Gate to Source leak current Gate to Source cutoff voltage Forward transfer admittance Static Drain to Source on state resistance Input capacitance Output capacitance Reverse transfer capacitance .. Turn-on delay time Rise time Turn-off delay time Fall time Total Gate charge Gate to Source charge Gate to Drain charge Body-Drain diode forward voltage Body-Drain diode reverse recovery time Body-Drain diode reverse recovery charge Notes: 4. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Qrr Min 200 - - 3.0 26 - - - - - - - - - - - - - - Typ - - - - 44 0.032 5150 660 110 65 260 200 180 132 30 60 1.0 190 1.4 Max - 1 ±0.1 4.0 - 0.042 - - - - - - - - - - 1.5 - - Unit V µA µA V S Ω p F p F p F ns ns ns ns n C n C n C V ns µC Test conditions ID = 10 m A, VGS = 0 VDS = 200 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 m A ID = 30 A, VDS = 10 V Note4 ID = 30 A, VGS = 10 VNote4 VDS = 25 V VGS = 0 f = 1 MHz ID = 30 A VGS = 10 V RL = 3.33 Ω Rg = 10 Ω VDD = 160 V VGS = 10 V ID = 60 A IF = 60 A, VGS = 0 Note4 IF = 60 A, VGS = 0 di F/dt = 100...