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H5N2510DS - Silicon N Channel MOS FET High Speed Power Switching

Download the H5N2510DS datasheet PDF. This datasheet also covers the H5N2510DL variant, as both devices belong to the same silicon n channel mos fet high speed power switching family and are provided as variant models within a single manufacturer datasheet.

Key Features

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  • Low.
  • Low on-resistance drive current.
  • High speed switching Outline.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H5N2510DL_RenesasTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H5N2510DS
Manufacturer Renesas
File Size 92.69 KB
Description Silicon N Channel MOS FET High Speed Power Switching
Datasheet download datasheet H5N2510DS Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
H5N2510DL, H5N2510DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1110-0200 (Previous: ADE-208-1379) Rev.2.00 Sep 07, 2005 Features www.DataSheet4U.com • Low • Low on-resistance drive current • High speed switching Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) ) 4 D 4 1. Gate 2. Drain 3. Source 4. Drain RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) G 1 2 3 S 1 2 3 Rev.2.00 Sep 07, 2005 page 1 of 4 H5N2510DL, H5N2510DS Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to case thermal Impedance Channel temperature www.DataSheet4U.