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H5N2519P Datasheet

Silicon N Channel MOS FET High Speed Power Switching

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H5N2519P
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
Low leakage current
High speed switching
Outline
TO-3P
D
G
S
123
REJ03G0478-0200
Rev.2.00
Nov.19.2004
1. Gate
2. Drain (Flange)
3. Source
Absolute Maximum Ratings
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch 150°C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
Ratings
250
±30
65
195
65
22
30.2
150
0.833
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.2.00 Nov. 19, 2004 page 1 of 6


Renesas Electronics Components Datasheet

H5N2519P Datasheet

Silicon N Channel MOS FET High Speed Power Switching

No Preview Available !

H5N2519P
Electrical Characteristics
Item
Drain to Source breakdown voltage
Zero Gate voltage drain current
Gate to Source leak current
Gate to Source cutoff voltage
Forward transfer admittance
Static Drain to Source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate charge
Gate to Source charge
Gate to Drain charge
Body-Drain diode forward voltage
Body-Drain diode reverse recovery time
Body-Drain diode reverse recovery
charge
Notes: 4. Pulse test
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|yfs|
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
trr
Qrr
Min
250
3.0
28
Typ
47
0.029
Max
1
±0.1
4.5
0.035
Unit
V
µA
µA
V
S
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
VDS = 250 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 32.5 A, VDS = 10 V Note4
ID = 32.5 A, VGS = 10 VNote4
4900
700
75
65
310
220
220
120
28
52
1.10
200
1.6
1.65
pF VDS = 25 V
pF VGS = 0
pF f = 1 MHz
ns ID = 32.5 A
ns VGS = 10 V
ns RL = 3.9
ns Rg = 10
nC VDD = 200 V
nC VGS = 10 V
nC ID = 65 A
V IF = 65 A, VGS = 0 Note4
ns IF = 65 A, VGS = 0
µC diF/dt = 100 A/µs
Rev.2.00 Nov. 19, 2004 page 2 of 6


Part Number H5N2519P
Description Silicon N Channel MOS FET High Speed Power Switching
Maker Renesas Technology
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