H5N2519P
Features
- Low on-resistance
- Low leakage current
- High speed switching
Outline
TO-3P
1. Gate 2. Drain (Flange) 3. Source
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse) IDR Note3 IAP EARNote3 Pch Note2 θch-c Tch Tstg
Note1
Ratings 250 ±30 65 195 65 22 30.2 150 0.833 150
- 55 to +150
Unit V V A A A A m J W °C/W °C °C
Rev.2.00 Nov. 19, 2004 page 1 of 6
Electrical Characteristics
(Ta = 25°C)
Item Drain to Source breakdown voltage Zero Gate voltage drain current Gate to Source leak current Gate to Source cutoff voltage Forward transfer admittance Static Drain to Source on state resistance Input...
