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H5N2519P - Silicon N Channel MOS FET High Speed Power Switching

Key Features

  • Low on-resistance.
  • Low leakage current.
  • High speed switching Outline TO-3P D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at T.

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Datasheet Details

Part number H5N2519P
Manufacturer Renesas
File Size 125.41 KB
Description Silicon N Channel MOS FET High Speed Power Switching
Datasheet download datasheet H5N2519P Datasheet

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www.DataSheet4U.com H5N2519P Silicon N Channel MOS FET High Speed Power Switching REJ03G0478-0200 Rev.2.00 Nov.19.2004 Features • Low on-resistance • Low leakage current • High speed switching Outline TO-3P D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse) IDR Note3 IAP EARNote3 Pch Note2 θch-c Tch Tstg Note1 Ratings 250 ±30 65 195 65 22 30.2 150 0.