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H5N2519P Datasheet - Renesas Technology

Silicon N Channel MOS FET High Speed Power Switching

H5N2519P Features

* Low on-resistance

* Low leakage current

* High speed switching Outline TO-3P D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode re

H5N2519P Datasheet (125.41 KB)

Preview of H5N2519P PDF

Datasheet Details

Part number:

H5N2519P

Manufacturer:

Renesas ↗ Technology

File Size:

125.41 KB

Description:

Silicon n channel mos fet high speed power switching.

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H5N2519P Silicon Channel MOS FET High Speed Power Switching Renesas Technology

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