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H7N1004FN - Silicon N Channel MOS FET High Speed Power Switching

Key Features

  • Low on-resistance.
  • RDS(on) = 25 mΩ typ. www. DataSheet4U. com.
  • Low drive current.
  • Available for 4.5 V gate drive Outline.

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Datasheet Details

Part number H7N1004FN
Manufacturer Renesas
File Size 147.96 KB
Description Silicon N Channel MOS FET High Speed Power Switching
Datasheet download datasheet H7N1004FN Datasheet

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H7N1004FN Silicon N-Channel MOSFET High-Speed Power Switching REJ03G1593-0100 Rev.1.00 Oct 23, 2007 Features • Low on-resistance • RDS(on) = 25 mΩ typ. www.DataSheet4U.com • Low drive current • Available for 4.5 V gate drive Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) D G 1. Gate 2. Drain 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3.