H7N1004FN
H7N1004FN is Silicon N Channel MOS FET High Speed Power Switching manufactured by Renesas.
Features
- Low on-resistance
- RDS(on) = 25 mΩ typ. ..
- Low drive current
- Available for 4.5 V gate drive
Outline
RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN)
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID (pulse) Note1 IDR IAP EAR Note 3 Pch Note 2 Tch Tstg
Note 3
Value 100 ±20 25 100 25 15 22.5 25 150
- 55 to +150
Unit V V A A A A m J W °C °C
REJ03G5193-0100 Rev.1.00 Oct 23, 2007 Page 1 of 7
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance .. Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 100 ±20
- - 1.5
- - 20
- -
- -
- -
- -
- -
- - Typ
- -
- -
- 25 30 35 2800 240 140 50 9 11 23 110 70 9.5 0.89 45 Max
- - ±10 10 2.5 35 45
- -
- -
- -
- -
- -
- -...
