HAF2026RJ Datasheet | Renesas

Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. Features - - - - - Logic level operation (5 to 6 V Gate drive) Built-in the over temperature shut-down circuit High endurance capability against to the shut-down circuit Latch type shut down operation (need 0 voltage recovery) Built-in the current limitation circuit Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 (FP-8DAV)) 8 5 7 6 3 1 2 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain D 7 D 8 D 5 D 6 .. 2 G Gate Resistor Current Limitation Circuit Gate Shut-down Circuit 1 S 4 G Gate Resistor Current Limitation Circuit Gate Shut-down Circuit 3 S Temperature Sensing Circuit Latch Circuit Temperature Sensing Circuit Latch Circuit MOS1 MOS2 Rev.2.00 Jun 02, 2006 page 1 of 8 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Drain to source voltage VDSS 60 Gate to source voltage VGSS 16 Gate to source voltage VGSS - 2.5 Drain current ID 0.6 Body-drain diode reverse drain current IDR 1 Avalanche current IAPNote3 0.6 Avalanche energy EARNote3 1.54 Cannel dissipation Pch Note1 1 Cannel dissipation Pch Note2 1.5 Cannel temperature Tch 150 Storage temperature Tstg - 55 to +150 Notes: 1. 1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s 2. 2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s 3. Tc = 25°C, Rg ≥ 50 Ω Unit V V V A A A m J W W °C °C Typical Operation Characteristics (Ta=25°C) Item Input voltage Input current (Gate non shut down) Input current (Gate shut down) Shut down temperature Gate operation voltage Drain current (Current limitation) .. Symbol VIH VIL IIH1 IIH2 IIL IIH(sd)1 IIH(sd)2 Tsd Vop ID limt Min...