HAT2200WP
Features
- Capable of 8 V gate drive
- Low drive current
- High density mounting
- Low on-resistance
RDS(on) = 22 m typ. (at VGS = 10 V)
Outline
RENESAS Package code: PWSN0008DA-A (Package name: WPAK)
5 678
4 321
Preliminary Datasheet
REJ03G1678-0311 Rev.3.11
Nov.25.2016
5 678 D DDD
1, 2, 3 Source
Gate
5, 6, 7, 8 Drain
S SS 1 23
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25°C, Rg 50 3. Tc = 25°C
Symbol VDSS
VGSS
ID ID(pulse) Note1
IDR IAP Note 2 EAR Note 2 Pch Note3 ch-c Note3
Tch
Tstg
Ratings 100 ±20 20 80 20 20 40 20 6.25 150
- 55 to +150
(Ta = 25°C)
Unit V V A A A A m J W
°C/W °C °C
REJ03G1678-0311 Rev.3.11 Nov. 25, 2016
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Electrical Characteristics...
