HAT2217C Overview
HAT2217C Silicon N Channel MOS FET Power Switching REJ03G0449-0300 Rev.3.00 May 19.2005.
HAT2217C Key Features
- Low on-resistance RDS(on) = 105 mΩ typ. (at VGS = 4.5 V)
- Low drive current
- High density mounting
- 4.5 V gate drive devices