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Renesas Electronics Components Datasheet

HAT2217C Datasheet

Silicon N Channel Power MOS FET Power Switching

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HAT2217C
Silicon N Channel MOS FET
Power Switching
Features
Low on-resistance
RDS(on) = 105 mtyp. (at VGS = 4.5 V)
Low drive current.
High density mounting
4.5 V gate drive devices.
Outline
RENESAS Package code: PWSF0006JA-A
(Package name: CMFPAK - 6)
234 5
DDD D
Index
band
65
4
3
2
1
6
G
S
1
www.DataSheet4U.com
REJ03G0449-0300
Rev.3.00
May 19.2005
1. Source
2. Drain
3. Drain
4. Drain
5. Drain
6. Gate
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to Source voltage
VDSS
60
Gate to Source voltage
VGSS
+20 / –10
Drain current
Drain peak current
ID
ID (pulse)Note1
3
12
Body - Drain diode reverse Drain current
Channel dissipation
IDR
PchNote 2
3
1.25
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Notes: 1. PW 10 µs, duty cycle 1%
2. When using the glass epoxy board. (FR4 40 × 40 × 1.6 mm), PW 5 s
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Rev.3.00 May 19, 2005 page 1 of 6


Renesas Electronics Components Datasheet

HAT2217C Datasheet

Silicon N Channel Power MOS FET Power Switching

No Preview Available !

HAT2217C
Electrical Characteristics
Item
Symbol
Drain to Source breakdown voltage V(BR)DSS
Gate to Source breakdown voltage V(BR)GSS
Gate to Source leakage current
Drain to Source leakage current
Gate to Source cutoff voltage
IGSS
IDSS
VGS(th)
Drain to Source on state resistance RDS(on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to Source charge
Gate to Drain charge
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Body - Drain diode forward voltage
Notes: 3. Pulse test
| yfs |
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
Min.
60
+20
–10
1
2.8
Typ.
105
126
4.3
275
40
16
4.5
0.8
0.7
5
11
35
3
0.85
Max.
±10
1
2
132
183
1.25
Unit
V
V
µA
µA
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
www.DataSheet4U.com
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = 16 / –8 V, VDS = 0
VDS = 60 V, VGS = 0
ID = 1 mA, VDS = 10 V Note3
ID = 1.5 A, VGS = 10 V Note3
ID = 1.5 A, VGS = 4.5 V Note3
ID = 1.5 A, VGS = 10 V Note3
VGS = 0
f = 1 MHz
VDS = 10 V
VGS = 10 V
VDS = 10 V
ID = 3 A
VGS = 10 V
ID = 1.5 A
VDD = 10 V
RL = 6.6 , Rg = 4.7
IF = 3 A, VGS = 0
Rev.3.00 May 19, 2005 page 2 of 6


Part Number HAT2217C
Description Silicon N Channel Power MOS FET Power Switching
Maker Renesas Technology
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