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HAT2217C - Silicon N-Channel Power MOSFET

Datasheet Summary

Features

  • Low on-resistance RDS(on) = 105 mΩ typ. (at VGS = 4.5 V).
  • Low drive current.
  • High density mounting.
  • 4.5 V gate drive devices. Outline.

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Datasheet Details

Part number HAT2217C
Manufacturer Renesas Technology
File Size 170.88 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet HAT2217C Datasheet
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www.DataSheet4U.com HAT2217C Silicon N Channel MOS FET Power Switching REJ03G0449-0300 Rev.3.00 May 19.2005 Features • Low on-resistance RDS(on) = 105 mΩ typ. (at VGS = 4.5 V) • Low drive current. • High density mounting • 4.5 V gate drive devices. Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK - 6) 2 3 4 5 DDD D Index band 4 5 6 2 3 6 G 1 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate S 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body - Drain diode reverse Drain current Symbol VDSS VGSS ID ID (pulse)Note1 IDR Note 2 Ratings 60 +20 / –10 3 12 3 Unit V V A A A W °C °C Channel dissipation Pch 1.25 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1.
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