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HAT2218R - Silicon N-Channel Power MOSFET

Key Features

  • Low on-resistance Capable of 4.5 V gate drive High density mounting Built-in Schottky Barrier Diode Outline SOP-8 7 8 D1 D1 5 6 S1/D2 S1/D2 8 2 G1 4 G2 5 7 6 3 1 2 4 S1/D2(kelvin) 1 S2 3 MOS1 MOS2 and Schottky Barrier Diode Absolute Maximum Ratings (Ta = 25°C) Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Symbol VDSS VGSS ID ID(pulse)Note1 IDR MOS1 30 ±20 7.5 60 7.5 MOS2 & SBD 30.

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Datasheet Details

Part number HAT2218R
Manufacturer Renesas
File Size 165.20 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet HAT2218R Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com HAT2218R Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching REJ03G0396-0300 Rev.3.00 Aug.23.2004 Features • • • • Low on-resistance Capable of 4.5 V gate drive High density mounting Built-in Schottky Barrier Diode Outline SOP-8 7 8 D1 D1 5 6 S1/D2 S1/D2 8 2 G1 4 G2 5 7 6 3 1 2 4 S1/D2(kelvin) 1 S2 3 MOS1 MOS2 and Schottky Barrier Diode Absolute Maximum Ratings (Ta = 25°C) Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Symbol VDSS VGSS ID ID(pulse)Note1 IDR MOS1 30 ±20 7.5 60 7.5 MOS2 & SBD 30 ±12 8.0 64 8.0 Unit V V A A A W Channel dissipation Pch Note2 1.5 1.5 Channel temperature Tch 150 150 Storage temperature Tstg –55 to +150 –55 to +150 Notes: 1.