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Renesas Electronics Components Datasheet

HAT2218R Datasheet

Silicon N Channel Power MOS FET

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HAT2218R
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Silicon N Channel Power MOS FET with Schottky Barrier Diode
High Speed Power Switching
REJ03G0396-0300
Rev.3.00
Aug.23.2004
Features
Low on-resistance
Capable of 4.5 V gate drive
High density mounting
Built-in Schottky Barrier Diode
Outline
SOP-8
2
G1
78
D1 D1
56
S1/D2 S1/D2
4
G2
8 7 65
1 234
S1/D2(kelvin)
1
MOS1
S2
3
MOS2 and
Schottky Barrier Diode
Absolute Maximum Ratings
Ratings
Item
Symbol
MOS1
MOS2 & SBD
Drain to source voltage
VDSS
30
30
Gate to source voltage
VGSS
±20
±12
Drain current
Drain peak current
ID
ID(pulse)Note1
7.5
60
8.0
64
Reverse drain current
Channel dissipation
IDR
Pch Note2
7.5
1.5
8.0
1.5
Channel temperature Tch 150
150
Storage temperature
Tstg
–55 to +150
–55 to +150
Notes: 1. PW 10 µs, duty cycle 1 %
2. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Rev.3.00, Aug.23.2004, page 1 of 9


Renesas Electronics Components Datasheet

HAT2218R Datasheet

Silicon N Channel Power MOS FET

No Preview Available !

HAT2218R
Electrical Characteristics
• MOS1
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Notes: 3. Pulse test
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
30
1.0
9
Typ
19
27
15
630
155
57
4.6
2.2
1.2
7
14
36
3.4
0.85
17
Max
±0.1
1
2.5
24
40
1.11
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Unit
V
µA
µA
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 30 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 3.75 A, VGS = 10 V Note3
ID = 3.75 A, VGS = 4.5 V Note3
ID = 3.75 A, VDS = 10 V Note3
VDS = 10 V
VGS = 0
f = 1MHz
VDD = 10 V
VGS = 4.5 V
ID = 7.5 A
VGS =10 V, ID = 3.75 A
VDD 10 V
RL = 2.66
Rg = 4.7
IF = 7.5 A, VGS = 0 Note3
IF =7.5 A, VGS = 0
diF/ dt = 100 A/µs
• MOS2 & Schottky Barrier Diode
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Schottky Barrier diode forward voltage
Body–drain diode reverse
recovery time
Notes: 3. Pulse test
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VF
trr
Min
30
1.4
15
Typ
17
21
25
1330
230
92
11
3.8
3.2
10
16
43
3.9
0.5
15
Max
±0.1
1
2.5
22
29
Unit
V
µA
mA
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±12 V, VDS = 0
VDS = 30 V, VGS = 0
VDS = 10 V, I D =1 mA
ID =4 A, VGS = 10 V Note3
ID = 4 A, VGS = 4.5 V Note3
ID = 4 A, VDS = 10 V Note3
VDS = 10 V
VGS = 0
f = 1MHz
VDD = 10 V
VGS = 4.5 V
ID = 8 A
VGS = 10 V, ID = 4 A
VDD 10 V
RL = 2.5
Rg = 4.7
IF = 3.5 A, VGS = 0 Note3
IF = 8 A, VGS = 0
diF/ dt = 100 A/µs
Rev.3.00, Aug.23.2004, page 2 of 9


Part Number HAT2218R
Description Silicon N Channel Power MOS FET
Maker Renesas Technology
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