HAT2218R - Silicon N-Channel Power MOSFET

Renesas Technology

Datasheet Details

Part number	HAT2218R
Manufacturer	Renesas Technology
File Size	165.20 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	HAT2218R_RenesasTechnology.pdf

Low on-resistance Capable of 4.5 V gate drive High density mounting Built-in Schottky Barrier Diode Outline SOP-8 7 8 D1 D1 5 6 S1/D2 S1/D2 8 2 G1 4 G2 5 7 6 3 1 2 4 S1/D2(kelvin) 1 S2 3 MOS1 MOS2 and Schottky Barrier Diode Absolute Maximum Ratings (Ta = 25°C) Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Symbol VDSS VGSS ID ID(pulse)Note1 IDR MOS1 30 ±20 7.5 60 7.5 MOS2 & SBD 30.

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Published: Apr 13, 2010 |