HAT2281C Description
HAT2281C Silicon N Channel MOS FET Power Switching REJ03G1328-0200 Rev.2.00 Jan 26, 2006.
HAT2281C Key Features
- Low on-resistance RDS(on) = 109 mΩ typ.(at VGS = 4.5 V)
- Low drive current
- High density mounting
- 2.5 V gate drive device