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Renesas Electronics Components Datasheet

HAT2287WP Datasheet

Silicon N Channel Power MOS FET Power Switching

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HAT2287WP
Silicon N Channel Power MOS FET
Power Switching
Features
Low on-resistance
Low drive current
High density mounting
Outline
RENESAS Package code: PWSN0008DA-A
(Package name: WPAK)
5 678
4 32 1
4
G
5 678
D DDD
www.DataSheet4U.com
REJ03G1470-0100
Rev.1.00
Sep 06, 2006
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
S SS
1 23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch 150°C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
Ratings
200
±30
17
34
17
34
17
19.2
30
4.17
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.1.00 Sep 06, 2006 page 1 of 3


Renesas Electronics Components Datasheet

HAT2287WP Datasheet

Silicon N Channel Power MOS FET Power Switching

No Preview Available !

HAT2287WP
Electrical Characteristics
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|yfs|
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
trr
Min
200
3.0
8
Notes: 4. Pulse test
Typ
14
0.084
Max
1
±0.1
4.0
0.094
1200
220
19
31
37
69
8
26
7
10
0.9
130
1.4
www.DataSheet4U.com
Unit
V
µA
µA
V
S
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
VDS = 200 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 8.5 A, VDS = 10 V Note4
ID = 8.5 A, VGS = 10 VNote4
pF VDS = 25 V
pF VGS = 0
pF f = 1 MHz
ns ID = 8.5 A
ns VGS = 10 V
ns RL = 11.8
ns Rg = 10
nC VDD = 160 V
nC VGS = 10 V
nC ID = 17 A
V IF = 17 A, VGS = 0 Note4
ns IF = 17 A, VGS = 0
diF/dt = 100 A/µs
Rev.1.00 Sep 06, 2006 page 2 of 3


Part Number HAT2287WP
Description Silicon N Channel Power MOS FET Power Switching
Maker Renesas Technology
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