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HN29V2G74WT-30 - AG-AND Flash Memory

General Description

The HN29V2G74 is a 2G-bit AG-AND flash memory.

It mounts two 1G-bit AG-AND flash memories with multi-level memory cells, which are programmable and erasable automatically with a single 3.0 V power supply.

Key Features

  • On-board single power supply: VCC = 2.7 V to 3.6 V.
  • Operation Temperature range: Ta = 0 to +70°C.
  • Memory organization  Memory array: (2048+64) bytes × 16384 page × 4 Bank × 2  Page size: (2048+64) bytes × 2  Block size: (2048+64) bytes × 2 page × 2  Page Register: (2048+64) bytes × 4 Bank × 2.
  • Multi level memory cell  2bit/cell.
  • Automatic program  Page program  Multi bank program  Cache program  2 page cache program.
  • Automatic Erase.

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HN29V2G74WT-30 (128M × 8-bit) ×2 AG-AND Flash Memory REJ03C0182-0200Z Rev. 2.00 Jul.21.2004 Description The HN29V2G74 is a 2G-bit AG-AND flash memory. It mounts two 1G-bit AG-AND flash memories with multi-level memory cells, which are programmable and erasable automatically with a single 3.0 V power supply. It achieves a write speed of 10 Mbytes/sec, which is 5 times faster than Renesas's previous multi level cell Flash memory, using 0.13µm process technology and AG-AND (Assist Gate-AND) type Flash memory cell using multi level cell technology provides both the most cost effective solution and high speed programming. Features • On-board single power supply: VCC = 2.7 V to 3.