HN58X25256I Datasheet | Renesas

HN58X25128I HN58X25256I Serial Peripheral Interface 128k EEPROM (16-kword × 8-bit) 256k EEPROM (32-kword × 8-bit) Electrically Erasable and Programmable Read Only Memory REJ03C0059-0300 Rev.3.00 Jul.06.2005 Description HN58X25xxx Series is the Serial Peripheral Interface patible (SPI) EEPROM (Electrically Erasable and Programmable ROM). It realizes high speed, low power consumption and a high level of reliability by employing advanced MONOS memory technology and CMOS process and low voltage circuitry technology. It also has a 64-byte page programming function to make it’s write operation faster. Note: Renesas Technology’s serial EEPROM are authorized for using consumer applications such as cellular phones, camcorders, audio equipments. Therefore, please contact Renesas Technology’s sales office before using industrial applications such as automotive systems, embedded controllers, and meters. Features - Single supply: 1.8 V to 5.5 V - Serial Peripheral Interface patible (SPI bus)  SPI mode 0 (0,0), 3 (1,1) - Clock frequency: 5 MHz (2.5 V to 5.5 V), 3 MHz (1.8 V to 5.5 V) - Power dissipation:  Standby: 3 µA (max)  Active (Read): 4 m A (max)  Active (Write): 4 m A (max) - Automatic page write: 64-byte/page - Write cycle time: 5 ms (2.5 V min), 8 ms (1.8 V min) - Endurance: 106 Erase/Write Cycles - Data retention: 10 Years - Small size packages: SOP-8pin and TSSOP-14pin - Shipping tape and reel  TSSOP-14pin : 2,000 IC/reel  SOP-8pin : 2,500 IC/reel - Temperature range: - 40 to +85°C - Lead free product. Rev.3.00, Jul.06.2005, page 1 of 20 HN58X25128I/HN58X25256I Ordering Information Type No. HN58X25128FPIE HN58X25256FPIE HN58X25128TIE HN58X25256TIE Internal organization 128-kbit (16834 × 8-bit) 256-kbit (32768 × 8-bit) 128-kbit (16834 × 8-bit) 256-kbit (32768 × 8-bit) Operating voltage 1.8 V to 5.5 V 1.8 V to 5.5 V Frequency 5 MHz (2.5 V to 5.5 V) 3 MHz (1.8 V to 5.5 V) 5 MHz (2.5 V to 5.5 V) 3 MHz (1.8 V to 5.5...