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R1LV0416CSB-7LI - 4M SRAM

This page provides the datasheet information for the R1LV0416CSB-7LI, a member of the R1LV0416CSB-5SI 4M SRAM family.

Description

The R1LV0416C-I is a 4-Mbit static RAM organized 256-kword × 16-bit.

R1LV0416C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell).

Features

  • Single 2.5 V and 3.0 V supply: 2.2 V to 3.6 V.
  • Fast access time: 55/70 ns (max).
  • Power dissipation:  Active: 5.0 mW/MHz (typ)(VCC = 2.5 V) : 6.0 mW/MHz (typ) (VCC = 3.0 V)  Standby: 1.25 µW (typ) (VCC = 2.5 V) : 1.5 µW (typ) (VCC = 3.0 V).
  • Completely static memory.  No clock or timing strobe required.
  • Equal access and cycle times.
  • Common data input and output.  Three state output.
  • Battery backup operation.  2 chip selection for.

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Datasheet preview – R1LV0416CSB-7LI

Datasheet Details

Part number R1LV0416CSB-7LI
Manufacturer Renesas Technology
File Size 96.01 KB
Description 4M SRAM
Datasheet download datasheet R1LV0416CSB-7LI Datasheet
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R1LV0416C-I Series Wide Temperature Range Version 4 M SRAM (256-kword × 16-bit) REJ03C0105-0100Z Rev. 1.00 Aug.05.2003 Description The R1LV0416C-I is a 4-Mbit static RAM organized 256-kword × 16-bit. R1LV0416C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The R1LV0416C-I Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It has packaged in 44-pin TSOP II. Features • Single 2.5 V and 3.0 V supply: 2.2 V to 3.6 V • Fast access time: 55/70 ns (max) • Power dissipation:  Active: 5.0 mW/MHz (typ)(VCC = 2.5 V) : 6.0 mW/MHz (typ) (VCC = 3.0 V)  Standby: 1.25 µW (typ) (VCC = 2.5 V) : 1.5 µW (typ) (VCC = 3.0 V) • Completely static memory.
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