RJK0211DPA Overview
Preliminary Datasheet RJK0211DPA Silicon N Channel Power MOS FET Power Switching.
RJK0211DPA Key Features
- Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on)
- Pb-free
- Halogen-free REJ03G1949-0021 Rev.0.21 Jul 02, 2010