Datasheet Details
- Part number
- RJK0211DPA
- Manufacturer
- Renesas ↗ Technology
- File Size
- 85.35 KB
- Datasheet
- RJK0211DPA_RenesasTechnology.pdf
- Description
- N-Channel MOSFET
RJK0211DPA Description
Preliminary Datasheet RJK0211DPA Silicon N Channel Power MOS FET Power Switching .RJK0211DPA Features
* Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.8 m typ. (at VGS = 10 V)RJK0211DPA Applications
* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law
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