RJL5015DPK Key Features
- Built-in fast recovery diode
- Low on-resistance RDS(on) = 0.23 typ. (at ID = 11 A, VGS = 10 V, Ta = 25C)
- Low leakage current
- High speed switching REJ03G1912-0100 Rev.1.00 May 27, 2010
- Part: RJL5015DPK
- Description: Silicon N Channel MOS FET High Speed Power Switching
- Manufacturer: Renesas
- Size: 104.73 KB
Related Renesas Datasheets
| Part Number | Description |
|---|---|
| RJL5014DPK | Silicon N Channel MOS FET High Speed Power Switching |
| RJL5014DPP | Silicon N Channel MOS FET High Speed Power Switching |
| RJL5018DPK | Silicon N Channel MOS FET High Speed Power Switching |
| RJL5020DPK | Silicon N Channel MOS FET High Speed Power Switching |
| RJL6012DPE | Silicon N Channel MOS FET High Speed Power Switching |