Datasheet4U Logo Datasheet4U.com

RJL5020DPK - Silicon N Channel MOS FET High Speed Power Switching

Key Features

  • Built-in fast recovery diode Low on-resistance Low leakage current High speed switching Outline.

📥 Download Datasheet

Datasheet Details

Part number RJL5020DPK
Manufacturer Renesas
File Size 97.82 KB
Description Silicon N Channel MOS FET High Speed Power Switching
Datasheet download datasheet RJL5020DPK Datasheet

Other Datasheets by Renesas

Part Number Description
RJL5014DPK Silicon N Channel MOS FET High Speed Power Switching
RJL5014DPP Silicon N Channel MOS FET High Speed Power Switching
RJL5015DPK Silicon N Channel MOS FET High Speed Power Switching
RJL5018DPK Silicon N Channel MOS FET High Speed Power Switching
RJL6012DPE Silicon N Channel MOS FET High Speed Power Switching
RJL6013DPP Silicon N Channel MOS FET High Speed Power Switching
RJL6014DPP Silicon N Channel MOS FET
RJL6015DPK Silicon N Channel MOS FET High Speed Power Switching
RJL6018DPK Silicon N Channel MOS FET High Speed Power Switching
RJL6020DPK Silicon N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com RJL5020DPK Silicon N Channel MOS FET High Speed Power Switching REJ03G1733-0400 Rev.4.00 Aug 29, 2008 Features • • • • Built-in fast recovery diode Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P) D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3.