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RKD703KJ - Silicon Schottky Barrier Diode

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Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment.

Features

  • Low Power consumption (Low reverse leak current) and high speed (Low capacitance).
  • We can support the lineup of environmental friendly halogen free type on your demand.
  • Ultra small Flat Lead Package (UFP) is suitable for compact and high-density surface mount design. Ordering Information Part No RKD703KJ P RKD703KJ R Laser Mark R1 Package Name UFP Package Code PWSF0002ZA-A Taping Abbreviation (Quantity) P (4,000 pcs / reel) R (8,000 pcs / reel) Pin Arrangement Cathode mark Ma.

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Datasheet Details

Part number RKD703KJ
Manufacturer Renesas Technology
File Size 100.50 KB
Description Silicon Schottky Barrier Diode
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. www.DataSheet.in Notice 1. All information included in this document is current as of the date this document is issued.
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