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2SA1862 - High-voltage Switching Transistor

Features

  • 1) High breakdown voltage. (BVCEO =.
  • 400V) 2) Low saturation voltage. (Typ. VCE (sat) =.
  • 0.3V at IC / IB =.
  • 500mA /.
  • 100mA) 3) High switching speed, typically tf = 0.4µs at IC =.
  • 1A. 4) Wide SOA (safe operating area). zExternal dimensions (Unit : mm) 0.75 5.5 1.5 (3) (2) (1) 2.3 0.9 0.9 0.65 2.3 5.1 6.5 C0.5 1.0 0.5 0.5 1.5 2.5 9.5 zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base volta.

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Datasheet Details

Part number 2SA1862
Manufacturer ROHM
File Size 93.05 KB
Description High-voltage Switching Transistor
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Full PDF Text Transcription

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2SA1862 Transistors High-voltage Switching Transistor (−400V, −2A) 2SA1862 zFeatures 1) High breakdown voltage. (BVCEO = −400V) 2) Low saturation voltage. (Typ. VCE (sat) = −0.3V at IC / IB = −500mA / −100mA) 3) High switching speed, typically tf = 0.4µs at IC = −1A. 4) Wide SOA (safe operating area). zExternal dimensions (Unit : mm) 0.75 5.5 1.5 (3) (2) (1) 2.3 0.9 0.9 0.65 2.3 5.1 6.5 C0.5 1.0 0.5 0.5 1.5 2.5 9.
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