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BA12004B - Darlinton Transistor Array

Datasheet Summary

Description

BA12003B/BF,BA12004B/BFare darlinton transistor array consist of 7circuits, input resistor to limit base current and output surge absorption clamp diode.

Features

  • Built-in 7 circuits.
  • High output break down voltage.
  • High DC output current gain.
  • Built-in input resistor to limit base current.
  • Built-in output surge absorption clamp diode Key Specifications.
  • Output break down voltage: VCE=60V(max).
  • Output current: Io=500mA/ch(max).
  • Operating supply voltage range: -0.5V to +30V.
  • Operating temperature range: -40°C to +85°C.
  • DC current gain: hfe=1000(min).
  • Input resistor: BA12003B/BF Rin=2.7kΩ.

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Datasheet Details

Part number BA12004B
Manufacturer ROHM
File Size 0.96 MB
Description Darlinton Transistor Array
Datasheet download datasheet BA12004B Datasheet
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Datasheet 7 Circuits Darlinton Transistor Array BA12003B BA12003BF BA12004B BA12004BF General Description BA12003B/BF,BA12004B/BFare darlinton transistor array consist of 7circuits, input resistor to limit base current and output surge absorption clamp diode. Features ■ Built-in 7 circuits ■ High output break down voltage ■ High DC output current gain ■ Built-in input resistor to limit base current ■ Built-in output surge absorption clamp diode Key Specifications ■ Output break down voltage: VCE=60V(max) ■ Output current: Io=500mA/ch(max) ■ Operating supply voltage range: -0.5V to +30V ■ Operating temperature range: -40°C to +85°C ■ DC current gain: hfe=1000(min) ■ Input resistor: BA12003B/BF Rin=2.7kΩ BA12004B/BF Rin=10.
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