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Rohm Semiconductor Electronic Components Datasheet

R6012ANJ Datasheet

Drive Nch MOSFET

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10V Drive Nch MOSFET
R6012ANJ
zStructure
Silicon N-channel MOSFET
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be ±30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
zApplications
Switching
zDimensions (Unit : mm)
LPTS
10.1
4.5 1.3
(1) Gate
(2) Drain
(3) Source
LPTL
1.24
2.54
5.08
0.78
(1) (2) (3)
0.4
2.7
Each lead has same dimensions
8.9
4.8
zPackaging specifications
Package
Taping
Type Code
LPTS
LPTL
TL
TLL
Basic ordering unit (pieces)
1000
www.DataSheet.co.kr
(1) Gate
(2) Drain
(3) Source
(1) (2) (3)
Each lead has same dimensions
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Drain-source voltage
VDSS
600
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
VGSS
ID
IDP
IS
ISP
3
1
3
1
±30
±12
±48
12
48
Avalanche Current
IAS 2
6
Avalanche Energy
EAS 2
9.6
Total power dissipation (Tc=25°C)
PD
100
Channel temperature
Tch 150
Range of storage temperature
Tstg
55 to +150
1 Pw10µs, Duty cycle1%
2 L 500µH, VDD=50V, RG=25, Starting, Tch=25°C
3 Limited only by maximum temperature allowed
Unit
V
V
A
A
A
A
A
mJ
W
°C
°C
zInner circuit
1
(1)
(1) Gate
(2) Drain
(3) Source
(2) (3)
1 Body Diode
zThermal resistance
Parameter
Channel to case
Symbol
Rth(ch-c)
Limits
1.25
Unit
°C/W
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
1/5
2009.04 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/


Rohm Semiconductor Electronic Components Datasheet

R6012ANJ Datasheet

Drive Nch MOSFET

No Preview Available !

R6012ANJ
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS
− ±100 nA VGS30V, VDS=0V
Drain-source breakdown voltage V(BR)DSS 600
V ID=1mA, VGS=0V
Zero gate voltage drain current IDSS
100 µA VDS=600V, VGS=0V
Gate threshold voltage
VGS(th)
2.5
4.5
V VDS=10V, ID=1mA
Static drain-source on-state resistance
RDS(on)
0.32 0.42 ID=6A, VGS=10V
Forward transfer admittance
| Yfs | 3.5
S ID=6A, VDS=10V
Input capacitance
Ciss 1300 pF VDS=25V
Output capacitance
Coss 890 pF VGS=0V
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
45
30
30
90
35
35
7
15
pF f=1MHz
ns ID=6A, VDD 300V
ns VGS=10V
ns RL=50
ns RG=10
nC VDD 300V
ID=12A
nC VGS=10V
nC RL=25/ RG=10
Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
Pulsed
Symbol Min. Typ. Max. Unit
Conditions
VSD
1.5 V IS=12A, VGS=0V
www.DataSheet.co.kr
Data Sheet
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
2/5
2009.04 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/


Part Number R6012ANJ
Description Drive Nch MOSFET
Maker Rohm
Total Page 6 Pages
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