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Schottky barrier Diode
RB162VA-20
Applications General rectification Dimensions (Unit : mm)
0.17 −0.05
+0.1
Land size figure (Unit : mm) 1.1
3)High reliability
TUMD2
Structure Silicon epitaxial planer
Structure
0.6
+0.2 −0.1
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (repetitive) VRM Reverse voltage (DC) VR Average rectified forward current Io Forward current surge peak (60Hz/1cyc) IFSM Junction temperature Tj Storage temperature Tstg
Limits 25 20 1.0 5.0 125 -40 to +125
Unit V V A A C C
Electrical characteristics (Ta=25C) Parameter Symbol Forward voltage Reverse current VF IR
Min. -
Typ. 0.36 0.3
Max. 0.4 1.2
Unit V mA
0.8 0.5 Conditions IF=1.