RB411 - Schottky barrier diode
RB411D Diodes Schottky barrier diode RB411D !Applications Low power rectification For switching power supply !External dimensions (Units : mm) 2.9±0.2 1.9±0.2 0.95 0.95 0.2 1.1 + *0.1 0.8±0.1 (All leads have the same dimensions) !Construction Silicon epitaxial planar ROHM : SMD3 EIAJ : SC-59 JEDEC : SOT-346 !Circuit !Absolute maximum ratings (Ta = 25°C) Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current ∗ Junction temperature Sto
RB411 Features
* 1) Small surface mounting type. (SMD3) 2) Low VF. (VF=0.43V Typ. at 0.5A) 3) High reliability.
0.2 1.6 +
* 0.1
2.8±0.2
0~0.1
+0.1 0.4
* 0.05
+0.1 0.15
* 0.06
RB411D
Diodes
!Electrical characteristic curves (Ta = 25°C)
Ta=125°C
100m
Ta =12 Ta= 5°C 75 ° C Ta =2 Ta =
