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RB411D - SCHOTTKY BARRIER DIODE

Key Features

  • z Small Surface Mounting Type z Low Reverse Current and Low Forward Voltage z High Reliability Marking: D3E Maximum Ratings(Ta=25℃ unless otherwise noted) Parameter Peak repetitive reverse voltage RMS reverse voltage DC reverse voltage Mean rectifying output current Non-repetitive Peak Forward Surge Current@t=8.3ms Power Dissipation Thermal Resistance Junction to Ambient Junction temperature Storage temperature Symbol VRM VR(RMS) VR IO IFSM PD RθJA Tj Tstg Limit 40 28 20 500 3 200 500 125 -5.

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Datasheet Details

Part number RB411D
Manufacturer JCET
File Size 744.74 KB
Description SCHOTTKY BARRIER DIODE
Datasheet download datasheet RB411D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes RB411D SCHOTTKY BARRIER DIODE SOT-23 FEATURES z Small Surface Mounting Type z Low Reverse Current and Low Forward Voltage z High Reliability Marking: D3E Maximum Ratings(Ta=25℃ unless otherwise noted) Parameter Peak repetitive reverse voltage RMS reverse voltage DC reverse voltage Mean rectifying output current Non-repetitive Peak Forward Surge Current@t=8.3ms Power Dissipation Thermal Resistance Junction to Ambient Junction temperature Storage temperature Symbol VRM VR(RMS) VR IO IFSM PD RθJA Tj Tstg Limit 40 28 20 500 3 200 500 125 -55~+150 Electrical Ratings @Ta=25℃ Parameter Reverse breakdown voltage Forward voltage Reverse current Capacitance between terminals Symbol VR VF1 VF2 IR CT Min.