JCET RB411D
SCHOTTKY BARRIER DIODE
| Part No. | RB411D |
|---|---|
| Datasheet | RB411D Download |
| Manufacturer |  JCET |
| Description | SCHOTTKY BARRIER DIODE |
| Buy | Stock & Price |
FEATURES
z Small Surface Mounting Type z Low Reverse Current and Low Forward Voltage z High Reliability Marking: D3EMAXIMUM RATINGS
(Ta=25℃ unless otherwise noted) Parameter Peak repetitive reverse voltage RMS reverse voltage DC reverse voltage Mean rectifying output current Non-repetitive Peak Forward Surge Current@t=8.3ms Power Dissipation Thermal Resistance Junction to Ambient Junction temperature Storage temperature Symbol VRM VR(RMS) VR IO IFSM PD RθJA Tj Tstg Limit 40 28 20 500 3 200 500 125 -55~+150 Electrical Ratings @Ta=25℃ Parameter Reverse breakdown voltage Forward voltage Reverse current Capacitance between terminals Symbol VR VF1 VF2 IR CT Min. 20 Typ. 20 Max. 0.3 0.5 30 Unit V V V μA pF 1 Unit V V V mA A mW ℃/W ℃ ℃ Condition IR=100μA IF=10mA IF=500mA VR=10V VR=10V,f=1MHz F,Oct,2015 CAPACITANCE BETWEEN TERMINALS C (pF) T POWER DISSIPATION P (mW) D Typical Characteristics Forward Characteristics 500 100 FORWARD CURRENT I (mA) F 10 =100℃ =25℃ T a 1 T a 0.1 0 100 200 300 400...
