RB411D Datasheet PDF

FEATURES

Small surface mounting type Low VF. (VF=0.43V Typ. at 0.5A) High reliability. Silicon epitaxial planar +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1

ABSOLUTE MAXIMUM RATINGS

Ta = 25 Parameter Reverse voltage DC Reverse voltage Mean rectifying current Forward current surge peak Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Rating 40 20 0.5 3 125 -40 to +125 Unit V V A A 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1.Base 2.Emitter 3.collector

ELECTRICAL CHARACTERISTICS

Ta = 25 Parameter Forwarad voltage Reverse current Capacitance between terminal Symbol Testconditons VF1 IF=500mA VF2 IF=10mA IR1 VR=10V CT VR=10V , f=1MHz Min Typ Max Unit 0.50 V 0.30 V 30 A 20 pF Marking Marking D3E 1