PANJIT International RB411D
Schottky Barrier Diode
FEATURES
High Reliability Low Reverse Current Ultra High-speed SwitchingMECHANICAL DATA
Case : SOT-23, Plastic Terminals : Solderable per MIL-STD-202G, Method 208 Approx. Weight : 0.08 gram Marking : 11D 500mA ABSOLUTE RATINGS (TA=25 ) Parameter Reverse Voltage Average Rectified Forward Current Forward Current Surge Peak (t=8.3ms) Junction Temperature Storage Temperature Symbol VRM IO IFSM TJ TSTG Value 40 500 3 125 -40 to +125 Units V mA A 8/02/2006 Page 1 RB411DELECTRICAL CHARACTERISTICS
(TA=25 ) Parameter Symbol Min. Typ. Max. Units Conditions Forward Voltage VF - - 0.5 V IF= 500mA - 0.3 V IF= 10mA Reverse Current IR - - 30 uA VR= 10V Junction Capacitance CJ - 16 - pF VR= 10V, f=1MHz 8/02/2006 Page 2 RB411DELECTRICAL CHARACTERISTICS
CURVE Fig. 1. Typical Forward Voltage Fig. 2. Typical Reverse Current 8/02/2006 Fig. 3. Typical Operating Temperature Derating Page 3 RB411D MOUNTING PAD LAYOUT LEGAL STATEMENT 8/02/2006 Page 4