RFN10NS3S diode equivalent, super fast recovery diode.
1)Low switching loss 2)High current overload capacity 3)Cathode common single type
ROHM : LPDS JEITA : TO263S
lStructure
②
lConstruction Silicon epitaxial planer
①
M.
General rectification
RFN10 NS3S
①
lFeatures 1)Low switching loss 2)High current overload capacity 3)Cathode common si.
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