RGT8BM65D Datasheet Field Stop Trench IGBT

Manufacturer: ROHM

Datasheet Details

RGT8BM65D 650V 4A Field Stop Trench IGBT Datasheet VCES IC(100°C) VCE(sat) (Typ.) PD 650V 4A 1.

1) Low Collector - Emitter Saturation Voltage 2) Low Switching Loss 3) Short Circuit Withstand Time 5μs 4) Built in Very Fast & Soft Recovery FRD (RFN - Series).
Outline TO-252 (1) (3) (2).
Inner Circuit (2).
1 (1) (3) (1) Gate (2) Collector (3) Emitter.
1 Built in FRD 5) Pb - free Lead Plating ; RoHS Compliant.