RLD65MZT1
Features
1) Optimization of a strained multi quantum well realizes the reduction in threshold current, and the good temperature characteristic. 2) Low threshold current : 25m A (TC=25°C) 3) Low noise is realized by a high frequency modulation element..
!External dimensions (Units : mm)
90°±2° 0.4±0.1 1
Equivalent circuit diagram
3 2
M t y p e
(3) L.D. (1) (2) P.D.
1.0±0.1
φ2.0±0.2
0 5.6 +
- 0.025 φ1.6 φ1min.
Glass window
1.2±0.1 2.3±0.5
Laser chip
(1.27)
0.5min. Sub mount
0.5max.
3- φ0.45
6.5±0.5 optical distance 1.35±0.08
φ1.2max.
φ4.4+0
φ3.6
1/2
..
Laser Diodes
!Absolute maximum ratings (Tc=25°C)
Parameter Output Reverse voltage Raser PIN photodiode Symbol PO VR VR(PIN) Topr Tstg Limits 7 2 30
- 10 to +70
- 40 to +85 Unit m W V V °C °C
Operating temperature Storage temperature
!Electrical and optical characteristics (Tc=25°C)
Parameter Threshold current Operating current Operating voltage Differential efficiency Monitor current Parallel divergence angle...
