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RU1HL13L Datasheet P-Channel Advanced Power MOSFET

Manufacturer: Ruichips

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Datasheet Details

Part number RU1HL13L
Manufacturer Ruichips
File Size 305.27 KB
Description P-Channel Advanced Power MOSFET
Download RU1HL13L Download (PDF)

General Description

TO252 Absolute Maximum Ratings P-Channel MOSFET Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=-10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ② EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Rating -100 ±20 175 -55 to 175 -13 ① -

Overview

RU1HL13L P-Channel Advanced Power MOSFET MOSFET.

Key Features

  • -100V/-13A, RDS (ON) =160mΩ(Typ. )@VGS=-10V RDS (ON) =180mΩ(Typ. )@VGS=-4.5V.
  • Super High Dense Cell Design.
  • ESD protected.
  • Reliable and Rugged.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant).

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