RU1HL13L Key Features
- 100V/-13A, RDS (ON) =160mΩ(Typ.)@VGS=-10V RDS (ON) =180mΩ(Typ.)@VGS=-4.5V
- Super High Dense Cell Design
- ESD protected
- Reliable and Rugged
- 100% avalanche tested
- Lead Free and Green Devices Available (RoHS pliant)
- Part: RU1HL13L
- Manufacturer: Ruichips
- Size: 305.27 KB
Related Ruichips Datasheets
| Part Number | Description |
|---|---|
| RU1HL13K | P-Channel Advanced Power MOSFET |
| RU1HL13R | P-Channel Advanced Power MOSFET |
| RU1HL8L | P-Channel Advanced Power MOSFET |
| RU1H100 | N-Channel Advanced Power MOSFET |
| RU1H100R | N-Channel Advanced Power MOSFET |
RU1HL13L Description
TO252 Ratings P-Channel MOSFET Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large.