RU1HL8L Datasheet | Ruichips

Features - -100V/-8A, RDS (ON) =350mΩ(Typ.)@VGS=-10V RDS (ON) =400mΩ(Typ.)@VGS=-4.5V - Super High Dense Cell Design - ESD protected - Reliable and Rugged - 100% avalanche tested - Lead Free and Green Devices Available (Ro HS pliant) Pin Description TO252 Applications - Power Management - DC/DC Converters P-Channel MOSFET Absolute Maximum Ratings Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=-10V) PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ② Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Rating -100 ±16 175 -55 to 175 -8 ① -32 -8...