RU1HL8L Overview
TO252 Applications Power Management DC/DC Converters P-Channel MOSFET Ratings Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS.
RU1HL8L Key Features
- 100V/-8A, RDS (ON) =350mΩ(Typ.)@VGS=-10V RDS (ON) =400mΩ(Typ.)@VGS=-4.5V
- Super High Dense Cell Design
- ESD protected
- Reliable and Rugged
- 100% avalanche tested
- Lead Free and Green Devices Available (RoHS pliant)