Datasheet4U Logo Datasheet4U.com

RU1H100R Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

📥 Download Datasheet

Datasheet Details

Part number RU1H100R
Manufacturer Ruichips
File Size 284.89 KB
Description N-Channel Advanced Power MOSFET
Download RU1H100R Download (PDF)

General Description

TO-220 Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG IS Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300µs Pulsed Drain Current Tested ID Continue Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance -Junction to Case Drain-Source Avalanche Ratings StoragEeAST③emperatAuvrealaRnacnhgeeEnergy ,Single Pulsed -55 to 150 Copyright© Ruichips Semiconductor Co., Ltd Rev.B –SEP., 2010 TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C R

Overview

RU1H100R N-Channel Advanced Power MOSFET.

Key Features

  • 100V/75A RDS (ON)=11mΩ(Typ. ) @ VGS=10V.
  • Ultra Low On-Resistance.
  • Extremely high dv/dt capability.
  • Fast Switching and Fully Avalanche Rated.
  • 100% avalanche tested.

More Datasheets from Ruichips

Part Number Description
RU1H100 N-Channel Advanced Power MOSFET
RU1H130Q N-Channel Advanced Power MOSFET
RU1H130R N-Channel Advanced Power MOSFET
RU1H130S N-Channel Advanced Power MOSFET
RU1H150R N-Channel Advanced Power MOSFET
RU1H190R N-Channel Advanced Power MOSFET
RU1H190S N-Channel Advanced Power MOSFET
RU1H300Q N-Channel Advanced Power MOSFET
RU1H35K N-Channel Advanced Power MOSFET
RU1H35L N-Channel Advanced Power MOSFET