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RU1H130R - N-Channel Advanced Power MOSFET

Description

Applications High Efficiency Synchronous Rectification in SMPS High Speed Power Switching Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG

Features

100V/130A, RDS (ON) =7mΩ(Typ. )@VGS=10V.
Super High Dense Cell Design.
Ultra Low On-Resistance.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant) Pin.

Ruichips

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RU1H130R n-channel advanced power mosfet by Ruichips - Datasheet Preview

Datasheet Details

Part number	RU1H130R
Manufacturer	Ruichips
File Size	306.18 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU1H130R Datasheet

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Full PDF Text Transcription

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RU1H130R N-Channel Advanced Power MOSFET Features •100V/130A, RDS (ON) =7mΩ(Typ.

Published: Apr 10, 2017 |