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RU1H150R - N-Channel Advanced Power MOSFET

Features

  • 100V/150A, RDS (ON) =3.5mΩ(Typ. )@VGS=10V.
  • Advanced SGT MOSFET Technology.
  • Ultra Low On-Resistance.
  • Excellent QgxRDS(on) Product.
  • 100% avalanche tested.
  • 175°C Operating Temperature.
  • Lead Free and Green Devices Available (RoHS Compliant).

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Datasheet Details

Part number RU1H150R
Manufacturer Ruichips
File Size 460.41 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU1H150R Datasheet

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Full PDF Text Transcription

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RU1H150R N-Channel Advanced Power MOSFET Features • 100V/150A, RDS (ON) =3.5mΩ(Typ.
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